Device for monitoring liquid crystal display and method for manufacturing liquid crystal display

ABSTRACT

A device for monitoring a liquid crystal display includes: a substrate including a display region and a non-display region disposed at an edge of the display region. The display region includes: a thin film transistor disposed on the substrate, a pixel electrode disposed on the substrate and connected to the thin film transistor, a first sacrificial layer disposed on the pixel electrode, and a roof layer disposed on the sacrificial layer. The non-display region includes: a second sacrificial layer disposed on the substrate, and the roof layer disposed on the second sacrificial layer. The first sacrificial layer has a first longitudinal dimension and a first cross-sectional area, and the second sacrificial layer has a second longitudinal dimension and a second cross-sectional area. The first cross-sectional area is the same as the second cross-sectional area. The second longitudinal dimension is greater than the first longitudinal dimension.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Divisional of U.S. patent application Ser. No.13/962,366, filed on Aug. 8, 2013, and claims priority from and thebenefit of Korean Patent Application No. 10-2013-0045739, filed on Apr.24, 2013, which is hereby incorporated by reference for all purposes asif set forth herein.

BACKGROUND

1. Field

Exemplary embodiments relate to display technology, and, moreparticular, to a device for monitoring a liquid crystal display and amethod for manufacturing the liquid crystal display.

2. Discussion

Conventional liquid crystal displays typically include two displaypanels having field generating electrodes, such as a pixel electrode anda common electrode, and a liquid crystal layer disposed therebetween. Inthis manner, traditional liquid crystal displays are configured todisplay an image by applying a voltage to one or more of the fieldgenerating electrodes, which, in turn, imposes an electric field on theliquid crystal layer.

The imposition of the electric field is configured to affect thealignment of liquid crystal molecules of the liquid crystal layer, and,thereby, control the polarization of incident light.

One type of conventional liquid crystal display is a nanocrystal liquidcrystal display (NCD), in which a display panel is manufactured byforming a sacrificial layer using, for example, an organic material, orthe like, forming a support member on an upper portion of thesacrificial layer, removing the sacrificial layer, and filling liquidcrystal in a microcavity formed by the removal of the sacrificial layer.Since the sacrificial layer is surrounded by a support structure (e.g.,a supporting layer), an etching (or stripping) material (or solution) istypically utilized to remove the sacrificial layer. In this this manner,the etching material is usually injected into an injection hole to reachthe sacrificial layer. The processing time to etch an exposed targetthrough an injection hole, however, can be relatively long, and,thereby, may increase the cost to manufacture the display device. Also,if the etching material is repeatedly used, an etching speed may bereduced, which may result in portions of the sacrificial layer not beingfully removed.

The above information disclosed in this Background section is only forenhancement of understanding of the background of the invention, and,therefore, it may contain information that does not form the prior artthat is already known in this country to a person of ordinary skill inthe art.

SUMMARY

Exemplary embodiments provide a device for monitoring a liquid crystaldisplay and a method for manufacturing the liquid crystal display toreduce the processing time and prevent (or otherwise reduce) theoccurrence of portions of the sacrificial layer not being fully removed.

Additional aspects will be set forth in the detailed description whichfollows and, in part, will be apparent from the disclosure, or may belearned by practice of the invention.

According to exemplary embodiments, a device for monitoring a liquidcrystal display, includes: a substrate including a display region and anon-display region disposed at an edge of the display region. Thedisplay region includes: a thin film transistor disposed on thesubstrate, a pixel electrode disposed on the substrate and connected tothe thin film transistor, a first sacrificial layer disposed on thepixel electrode, and a roof layer disposed on the first sacrificiallayer. The peripheral region includes: a second sacrificial layerdisposed on the substrate, and the roof layer disposed on the secondsacrificial layer. The first sacrificial layer has a first longitudinaldimension and a first cross-sectional area, and the second sacrificiallayer has a second longitudinal dimension and a second cross-sectionalarea. The first cross-sectional area is the same as the secondcross-sectional area. The second longitudinal dimension is longer thanthe first longitudinal dimension.

According to exemplary embodiments, a method for manufacturing a liquidcrystal display, includes: applying a sacrificial layer forming materialon a substrate including a display region and a non-display region,patterning the sacrificial layer forming material using a mask to form afirst sacrificial layer in the display region and a second sacrificiallayer in the non-display region, forming a roof layer to cover the firstsacrificial layer and the second sacrificial layer, and simultaneouslyetching the first sacrificial layer and the second sacrificial layer.The first sacrificial layer has a first longitudinal dimension and afirst cross-sectional area, and the second sacrificial layer has asecond longitudinal dimension and a second cross-sectional area. Thefirst cross-sectional area is the same as the second cross-sectionalarea. The second longitudinal dimension is longer than the firstlongitudinal dimension.

According to exemplary embodiments, the use of, for example, one or moreetching materials is monitored in various regions during the formationof a display device and is replaced to prevent (or otherwise reduce) theoccurrence of a portion of the sacrificial layer from not being fullyremoved, as well as to reduce the processing time and cost of theassociated display device.

The foregoing general description and the following detailed descriptionare exemplary and explanatory and are intended to provide furtherexplanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this specification, illustrate exemplary embodiments of theinvention, and together with the description serve to explain theprinciples of the invention.

FIG. 1 is a layout view of a device for monitoring a liquid crystaldisplay, according to exemplary embodiments.

FIG. 2 is a perspective view of a portion of a display region and aperipheral region of the display device of FIG. 1, according toexemplary embodiments.

FIG. 3 is a cross-sectional view of the respective portions of FIG. 2taken along sectional lines and III′-III″, according to exemplaryembodiments.

FIG. 4 is a cross-sectional view of the respective portions of FIG. 2taken along sectional lines IV-IV′ and IV′-IV″, according to exemplaryembodiments.

FIG. 5 schematically illustrates an over-etching degree used by a devicefor monitoring a liquid crystal display, according to exemplaryembodiments.

FIG. 6 is a plan view of the device for monitoring a liquid crystaldisplay, according to exemplary embodiments.

FIG. 7 is a plan view of a liquid crystal display, according toexemplary embodiments.

FIG. 8 is a cross-sectional view of the liquid crystal display of FIG. 7taken along sectional line VIII-VIII, according to exemplaryembodiments.

FIG. 9 is a cross-sectional view of the display device of FIG. 7 takenalong sectional line IX-IX, according to exemplary embodiments.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

In the following description, for the purposes of explanation, numerousspecific details are set forth in order to provide a thoroughunderstanding of various exemplary embodiments. It is apparent, however,that various exemplary embodiments may be practiced without thesespecific details or with one or more equivalent arrangements. In otherinstances, well-known structures and devices are shown in block diagramform in order to avoid unnecessarily obscuring various exemplaryembodiments.

In the accompanying figures, the size and relative sizes of layers,films, panels, regions, etc., may be exaggerated for clarity anddescriptive purposes. Also, like reference numerals denote likeelements.

When an element or layer is referred to as being “on,” “connected to,”or “coupled to” another element or layer, it may be directly on,connected to, or coupled to the other element or layer or interveningelements or layers may be present. When, however, an element or layer isreferred to as being “directly on,” “directly connected to,” or“directly coupled to” another element or layer, there are no interveningelements or layers present. For the purposes of this disclosure, “atleast one of X, Y, and Z” and “at least one selected from the groupconsisting of X, Y, and Z” may be construed as X only, Y only, Z only,or any combination of two or more of X, Y, and Z, such as, for instance,XYZ, XYY, YZ, and ZZ. Like numbers refer to like elements throughout. Asused herein, the term “and/or” includes any and all combinations of oneor more of the associated listed items.

Although the terms first, second, etc., may be used herein to describevarious elements, components, regions, layers, and/or sections, theseelements, components, regions, layers, and/or sections should not belimited by these terms. These terms are used to distinguish one element,component, region, layer, or section from another element, component,region, layer, or section. Thus, a first element, component, region,layer, or section discussed below could be termed a second element,component, region, layer, or section without departing from theteachings of the present disclosure.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper,” and/or the like, may be used herein for descriptive purposes,and, thereby, to describe one element or feature's relationship toanother element(s) or feature(s) as illustrated in the drawings.Spatially relative terms are intended to encompass differentorientations of an apparatus in use or operation in addition to theorientation depicted in the drawings. For example, if the apparatus inthe drawings is turned over, elements described as “below” or “beneath”other elements or features would then be oriented “above” the otherelements or features. Thus, the exemplary term “below” can encompassboth an orientation of above and below. Furthermore, the apparatus maybe otherwise oriented (e.g., rotated 90 degrees or at otherorientations), and as such, the spatially relative descriptors usedherein interpreted accordingly.

The terminology used herein is for the purpose of describing particularembodiments and is not intended to be limiting. As used herein, thesingular forms “a,” “an,” and “the” are intended to include the pluralforms as well, unless the context clearly indicates otherwise. Moreover,the terms “comprises” and/or “comprising,” when used in thisspecification, specify the presence of stated features, integers, steps,operations, elements, and/or components, but do not preclude thepresence or addition of one or more other features, integers, steps,operations, elements, components, and/or groups thereof.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this disclosure is a part. Terms,such as those defined in commonly used dictionaries, should beinterpreted as having a meaning that is consistent with their meaning inthe context of the relevant art and will not be interpreted in anidealized or overly formal sense, unless expressly so defined herein.

While exemplary embodiments are described in association with liquidcrystal display (LCD) devices, it is contemplated that exemplaryembodiments may be utilized in association with other or equivalentdisplay devices, such as various self-emissive and/or non-self-emissivedisplay technologies. For instance, self-emissive display devices mayinclude organic light emitting displays (OLED), plasma display panels(PDP), etc., whereas non-self-emissive display devices may includeelectroluminescent (EL) displays, electrophoretic displays (EPD),electrowetting displays (EWD), etc.

FIG. 1 is a layout view of a device for monitoring a liquid crystaldisplay, according to exemplary embodiments. FIG. 2 is a perspectiveview of a portion of a display region and a peripheral region of thedisplay device of FIG. 1. FIG. 3 is a cross-sectional view of therespective portions of FIG. 2 taken along sectional lines and III′-III″,according to exemplary embodiments. FIG. 4 is a cross-sectional view ofthe respective portions of FIG. 2 taken along sectional lines IV-IV′ andIV′-IV″, according to exemplary embodiments.

Referring to FIG. 1, a device for monitoring a liquid crystal displayincludes a substrate 110, which includes a display region DP and anon-display region (such as a peripheral region) NDP. The display regionDP is a region in which one or more signal lines, one or more thin filmtransistors, and one or more field generating electrodes are formed tofacilitate the display of an image for presentation to an observer. Thenon-display region NDP may be a region positioned at one or more edgeportions of the display region DP, and, for example, surrounds thedisplay region DP. In this manner, the non-display region NDP may boundthe display region DP. As such, the non-display region NDP may beinterchangeably referred to herein as “the non-display region” or the“peripheral region” NDA. To this end, the non-display region NDP may bea region in which an image is not presented. In exemplary embodiments,one or more driving units (not shown) and/or other components may bepositioned.

According to exemplary embodiments, a first sacrificial layer 300 a isdisposed at a position corresponding to a pixel region in the displayregion DP, and a second sacrificial layer 300 b is disposed in theperipheral region NDP. In exemplary embodiments, the second sacrificiallayer 300 b may have the same shape and/or configuration as the firstsacrificial layer 300 a. It is contemplated, however, that the shape,configuration, etc., of the first and second sacrificial layers 300 aand 300 b may be different. As will become more apparent below, when theconfigurations of the first and second sacrificial layers 300 a and 300b are different, the respective configurations may be provided to enablea rate of etching to be the same for the first and second sacrificiallayers 300 a and 300 b. To this end, the first sacrificial layer 300 aand the second sacrificial layer 300 b may be formed of any suitablematerial, such as, for example, an organic material, e.g., photoresist.

Referring to FIG. 2, a region P1, which is an illustrative portion ofthe display region DP, includes the first sacrificial layer 300 a, whichis one of a plurality of first sacrificial layers 300 a in a pattern offirst sacrificial layers 300 a disposed adjacent to each other. Each ofthe first sacrificial layers 300 a longitudinally extends in asacrificial layer etching direction D1, which is described in moredetail later.

Region P2 is a portion of the peripheral region NDP and includes thesecond sacrificial layer 300 b, which is one of a plurality of secondsacrificial layers 300 b in a pattern of second sacrificial layers 300 bdisposed adjacent to each other. Although the drawings illustrate aplurality of second sacrificial layers 300 b, it is contemplated thatonly one second sacrificial layer 300 b may be provided. Each of thesecond sacrificial layers 300 b longitudinally extends in thesacrificial layer etching direction D1. It is contemplated, however,that the second sacrificial layers 300 b may extend in a differentdirection than the first sacrificial layers 300 a. In exemplaryembodiments, a separation distance (or pitch) between first sacrificiallayers 300 a in the pattern of first sacrificial layers 300 a and aseparation distance between second sacrificial layers 300 b in thepattern of second sacrificial layers 300 b may be the same as eachother. It is contemplated, however, that they may be different.

According to exemplary embodiments, a first sacrificial layer 300 a hasa first length d1 and a first cross-sectional area S1 in the sacrificiallayer etching direction D1. The second sacrificial layer 300 b has asecond length d2 and a second cross-sectional area S2 in the sacrificiallayer etching direction D1. The first cross-sectional area S1 of thefirst sacrificial layer 300 a and the second cross-sectional area S2 ofthe second sacrificial layer 300 b may be the same as each other, butthe second length d2 of the second sacrificial layer 300 b may be longerthan the first length d1 of the first sacrificial layer 300 a. It iscontemplated; however, that other relationships may be utilized. Forinstance, the first and second cross-sectional areas S1 and S2 may bedifferent, the first and second lengths d1 and d2 may be the same, thefirst length d1 may be longer than the second length d2, etc.

In exemplary embodiments, the same mask may be used in order to form thefirst sacrificial layers 300 a and the second sacrificial layers 300 bhaving the aforementioned shape, where S1=S2 and d2>d1.

Referring to FIGS. 3 and 4, a common electrode 270 is positioned on thefirst sacrificial layer 300 a. The common electrode 270 may or may notbe positioned on the second sacrificial layer 300 b formed in theperipheral region NDP.

A first (e.g., lower) insulating layer 350 is positioned on the commonelectrode 270 and the second sacrificial layer 300 b. The lowerinsulating layer 350 may be formed of any suitable insulating material,such as, for example, silicon nitride (SiNx), silicon oxide (SiOx). Aroof layer 360 is positioned on the lower insulating layer 350. The rooflayer 360 may include any suitable material, such as, for instance,silicon oxycarbide (SiOC), photoresist, and/or any other suitableorganic material(s).

A second (e.g., upper) insulating layer 370 is positioned on the rooflayer 360. The upper insulating layer 370 may be formed of any suitableinsulating material, such as, for instance, silicon nitride (SiNx),silicon oxide (SiOx), etc.

According to exemplary embodiments, the roof layer 360 and/or one ormore other layers (e.g.., portions of the common electrode 270 and/orthe lower insulating layer 350) fill a space between the firstsacrificial layers 300 a and a space between the second sacrificiallayers 300 b, these spaces being disposed between first sacrificiallayers 300 a or second sacrificial layers 300 b that are adjacent to oneanother in a second (e.g., horizontal) direction. The second directionmay relate to a direction of longitudinal extension of one or more gatelines, which are described in more detail in association with FIG. 7. Tothis end, the second direction may be perpendicular (or substantiallyperpendicular) to the etching direction D1. In this manner, the rooflayer 360 forms a partition forming portion PWP. The partition formingportion PWP serves to support microcavities from when the firstsacrificial layer 300 a and the second sacrificial layer 300 b areremoved.

A liquid crystal injection hole forming region 307FP is positionedbetween the first sacrificial layers 300 a and between the secondsacrificial layers 300 b, which are adjacent to one another in a first(e.g., vertical) direction, which may correspond to the longitudinalextension direction of a data line, which is descried in more detail inassociation with FIG. 7. In this manner, the exposed portions of thefirst sacrificial layer 300 a and the second sacrificial layer 300 b maybegin to be etched from an inlet portion 307.

As illustrated in FIGS. 3 and 4, the space between the first sacrificiallayers 300 a and the space between the second sacrificial layers 300 b,which are adjacent to one another in a horizontal direction, aresurrounded by the partition forming portion PWP, such as the roof layer360. The space between the first sacrificial layers 300 a and the spacebetween the second sacrificial layers 300 b, which are adjacent to oneanother in a vertical direction, are etched in a vertical directionsince the first sacrificial layers 300 a and the second sacrificiallayers 300 b are exposed via the liquid crystal injection hole formingregion 307FP. In other words, the sacrificial layer etching direction D1may be the aforementioned vertical direction.

According to exemplary embodiments, if the duration over which the firstsacrificial layer 300 a is completely removed by an initial sacrificiallayer removal etchant (e.g., a liquid chemical) is considered a firstprocessing time, then the first sacrificial layer 300 a and the secondsacrificial layer 300 b may be etched (or otherwise removed) over asecond processing time (or duration) that is about 120% to 150%, e.g.,about 130% to 140%, of the first process time. In this manner, thesecond processing time may be longer than the first processing time, andmay be a length of time about 150% of the first processing time. To thisend, etching the first sacrificial layers 300 a and the secondsacrificial layers 300 b over the second processing time prevents (orotherwise reduces) the potential of the first sacrificial layers 300 afrom not being completely etched or otherwise removed. It iscontemplated, however, that the second processing time may be greaterthan the first processing time by any suitable amount, and, therefore,exemplary embodiments are not to be limited by the aforementioned 120%to 150% numerical range.

A device for monitoring the liquid crystal display, according toexemplary embodiments, may confirm complete removal of the firstsacrificial layer 300 a and an amount (or degree) of over-etching of thesecond sacrificial layer 300 b during the second processing time. Thisis described in more detail in association with FIGS. 5 and 6.

FIG. 5 schematically illustrates an over-etching degree used by a devicefor monitoring a liquid crystal display, according to exemplaryembodiments.

As seen in FIG. 5, the amount or degree of over-etching of the secondsacrificial layer 300 b in the sacrificial layer etching direction D1 isa percentage, and a section where the amount of over-etching of thesecond sacrificial layer 300 b ranges from 100% of the first length d1of the first sacrificial layer 300 a to 120% of the first length d1 maybe defined as a “warning” section, and a section where the degree ofover-etching ranges from 120% of the first length d1 to 150% of thefirst length d1 may be defined as a “normal” section.

In exemplary embodiments, etching lengths of the first sacrificial layer300 a and the second sacrificial layer 300 b are in proportion to theetching processing times, and, thereby, the relative configurations ofthe first and second sacrificial layers 300 a and 300 b. For instance,when the degree of etching of the second sacrificial layer 300 b doesnot reach 100% of the first length (d1), then the first sacrificiallayer 300 a is not completely removed, and, as such, at least a portionthereof remains. This section may be defined as a “remaining portion”section. When 120% of the first length d1 is a first upper limit value(%) and 150% of the first length d1 is a second upper limit value (%),the first upper limit value (%) and the second upper limit value (%) maybe adjusted based on the individual and relative configurations of thefirst and second sacrificial layers 300 a and 300 b.

According to exemplary embodiments, when the device provides anindication that the degree of over-etching of the second sacrificiallayer 300 b is in the warning section or the remaining portion section,then it may be determined that it is time to replace the initialsacrificial layer removal etchant (e.g., liquid chemical) with new (orfresh) sacrificial layer removal etchant.

FIG. 6 is a plan view of the device for monitoring the liquid crystaldisplay, according to exemplary embodiments.

Referring to FIG. 6, a dummy sacrificial layer 300 c is formed adjacentto the second sacrificial layer 300 b. The dummy sacrificial layer 300 chas the same cross-section as the second sacrificial layer 300 b, butmay have a smaller length than the second sacrificial layer 300 b in thesacrificial layer etching direction D1. The dummy sacrificial layer 300c serves to construct an etching environment that is similar to that ofthe first sacrificial layers 300 a included in the display region DP.For example, the first sacrificial layer 300 a included in the displayregion DP may be one of a plurality of first sacrificial layers 300 a ina pattern of first sacrificial layers 300 a. To this end, the secondsacrificial layer 300 b may be formed of one sacrificial layer 300 b. Inthis manner, the dummy sacrificial layer 300 c may serve to correspondto another second sacrificial layer 300 b adjacent to the one secondsacrificial layer 300 b, so that the etching conditions for the onesecond sacrificial layer 300 b is similar to the etching conditions ofthe first sacrificial layer 300 a in the pattern of first sacrificiallayers 300 a.

According to exemplary embodiments, the second sacrificial layer 300 bincludes gradations marked along its longitudinal dimension tofacilitate confirmation of the degree of over-etching of the secondsacrificial layer 300 b. For instance, the second sacrificial layer 300b may at least include gradations associated with each of theaforementioned warning, normal, and remaining portion sections. It iscontemplated, however, that one or more intermediary gradations may beprovided between the aforementioned warning, normal, and remainingportion sections. In this manner, the gradations may be provided at anysuitable level of granularity.

A method for manufacturing the liquid crystal display using theaforementioned device for monitoring the liquid crystal display will bedescribed in association with FIGS. 1-4.

Referring to FIGS. 1-4, in the method for manufacturing the liquidcrystal display, a sacrificial layer forming material is applied on asubstrate 110 including a display region DP and a peripheral region NDP.

The sacrificial layer forming material is patterned using a mask to formfirst sacrificial layers 300 a in the display region DP and form one ormore second sacrificial layers 300 b in the peripheral region NDP. Thefirst sacrificial layers 300 a and the one or more second sacrificiallayers 300 b may be formed so that each of the first sacrificial layers300 a have a first length d1 and a first cross-sectional area S1 and theone or more second sacrificial layer 300 b have a second length d2 and asecond cross-sectional area S2. The first cross-sectional area S1 andthe second cross-sectional area S2 may be the same as each other, andthe second length d2 may be longer than the first length d1.

A roof layer 360 is formed to cover the first sacrificial layers 300 aand the one or more second sacrificial layers 300 b. Before the rooflayer 360 is formed, a common electrode 270 and a lower insulating layer350 may be formed, and the common electrode 270 may be formed on justthe first sacrificial layers 300 a or on both the first sacrificiallayers 300 a and one or more of the second sacrificial layers 300 b. Anupper insulating layer 370 is formed on the roof layer 360.

The first sacrificial layers 300 a and the one or more secondsacrificial layer 300 b may be simultaneously etched over a determinedsecond processing time. If a duration of time for which it takes thefirst sacrificial layers 300 a to be completely removed by an initialsacrificial layer removal etchant (e.g., liquid chemical) is a firstprocessing time, the second processing time may be longer than the firstprocessing time, and may be about 150% of the first processing time.

When the first sacrificial layer 300 a is completely removed during thesecond processing time, a degree of over-etching of the secondsacrificial layer 300 b may be monitored and confirmed. In this manner,as described above, a section where the degree of over-etching of thesecond sacrificial layer 300 b ranges from 100% of the first length d1to a determined first upper limit value (%) of the first length d1 maybe defined as a warning section, and a section where the degree ofover-etching ranges from the determined first upper limit value (%) to adetermined second upper limit value (%) may be defined as a normalsection. To this end, the determined first upper limit value (%) may belarger than 100%, and the determined second upper limit value (%) may beset to be larger than the first upper limit value (%). Further, when thedegree of etching of the second sacrificial layer 300 b does not reach100% of the first length d1, it is known that the first sacrificiallayer 300 a is not completely removed, and, thereby, a portion thereofremains. This section may be defined as a remaining portion section.

When the degree of over-etching of the second sacrificial layer 300 b isincluded in the warning section or the remaining portion section, thesacrificial layer removal etchant (e.g., liquid chemical) may bereplaced. In this manner, after the first sacrificial layer 300 a iscompletely removed, those structures including the second sacrificiallayer 300 b positioned in the peripheral region NDP may be removed.

The device for monitoring the liquid crystal display and the liquidcrystal display formed by the manufacturing method will be described inassociation with FIGS. 7-9.

FIG. 7 is a plan view of a liquid crystal display, according toexemplary embodiments. FIG. 8 is a cross-sectional view of the liquidcrystal display of FIG. 7 taken along sectional line VIII-VIII, whereasFIG. 9 is a cross-sectional view of the liquid crystal display of FIG. 7taken along sectional line IX-IX.

With continued reference to FIGS. 1-3, a gate line 121 and a storageelectrode line 131 are formed on an insulation substrate 110 made of anysuitable material, such as, for example, transparent glass, plastic,and/or the like. The gate line 121 includes a gate electrode 124. Thestorage electrode line 131 mainly extends in the second (e.g.,horizontal) direction and is configured to transfer a predeterminedvoltage, such as a common voltage (Vcom). The storage electrode line 131includes a pair of vertical portions 135 a that extend substantiallyvertical to the gate line 121, and a horizontal portion 135 b connectingends of the pair of vertical portions 135 a to each other. The storageelectrodes 135 a and 135 b have a structure surrounding a pixelelectrode 191.

A gate insulating layer 140 is formed on the gate line 121 and thestorage electrode line 131. A semiconductor layer 151 positioned on alower portion of a data line 171, and a semiconductor layer 154positioned on lower portions of source/drain electrodes 173 and 175 anda channel portion of a thin film transistor Q are formed on the gateinsulating layer 140.

A plurality of ohmic contacts (not shown) may be formed on eachsemiconductor layer 151 and 154, and between the data line 171 and thesource/drain electrodes 173 and 175.

Data conductors 171, 173, and 175 including the source electrode 173,the data line 171 connected to the source electrode 173, and the drainelectrode 175 are formed on each of the semiconductor layers 151 and 154and the gate insulating layer 140.

The gate electrode 124, the source electrode 173, and the drainelectrode 175 form a thin film transistor Q together with thesemiconductor layer 154, and a channel of the thin film transistor Q isformed at the semiconductor layer portion 154 between the sourceelectrode 173 and the drain electrode 175.

A first interlayer insulating layer 180 a is formed on the dataconductors 171, 173, and 175 and the exposed portion of thesemiconductor layer 154. The first interlayer insulating layer 180 a mayinclude any suitable inorganic insulator, such as, for example, siliconnitride (SiNx), silicon oxide (SiOx), etc., and/or any suitable organicinsulator.

A color filter 230 and a light blocking member (black matrix) 220 areformed on the first interlayer insulating layer 180 a.

The light blocking member 220 has a lattice structure including anopening corresponding to a region for displaying an image, and is formedof any suitable material through which light does not penetrate. Thecolor filter 230 is formed in the opening of the light blocking member220. In exemplary embodiments, the light blocking member 220 is openover the thin film transistor Q in order to enable the thin filmtransistor Q to be repaired or otherwise modified during one or moresubsequent manufacturing processes. In other words, the opening of thelight blocking member 220 may be formed to include a region over whichthe thin film transistor Q is formed.

The color filter 230 may facilitate the display of any suitable color,such as one of the primary color, e.g., red, green, and blue colors. Itis contemplated, however, that the color filter 230 may facilitate thedisplay of other colors, such as, for instance, cyan, magenta, yellow,white-based colors, etc. The color filter 230 may be formed of anysuitable material(s) configured to enable displaying different colorsfor each of the adjacent pixels.

A second interlayer insulating layer 180 b is formed on the color filter230 and the light blocking member 220 to cover the color filter 230 andthe light blocking member 220. The second interlayer insulating layer180 b may include any suitable inorganic insulator, such as, forinstance, silicon nitride (SiNx), silicon oxide (SiOx), etc., and/or anysuitable organic insulator. Unlike as shown in FIG. 2, when a stepoccurs due to a difference in thicknesses of the color filter 230 andthe light blocking member 220, the second interlayer insulating layer180 b may be provided to reduce or remove the step.

A contact hole 185, through which the drain electrode 175 is exposed, isformed in the color filter 230, the light blocking member 220, and theinterlayer insulating layers 180 a and 180 b.

The pixel electrode 191 is formed on the second interlayer insulatinglayer 180 b. The pixel electrode 191 may be made of any suitabletransparent conductive material, such as, for instance, aluminum zincoxide (AZO), gallium zinc oxide (GZO), indium tin oxide (ITO), indiumzinc oxide (IZO), indium tin zinc oxide (ITZO), etc. It is alsocontemplated that one or more conductive polymers (ICP) may be utilized,such as, for example, polyaniline, poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (PEDOT:PSS), etc.

The “overall” shape of the pixel electrode 191 may form a quadrilateralconfiguration; however, any other suitable configuration may beutilized. As shown, the pixel electrode 191 includes a cross-shaped stemportion formed of a horizontal stem portion 191 a and a vertical stemportion 191 b crossing the horizontal stem portion 191 a. Further, thepixel electrode 191 may be divided into a plurality of sub-regions(e.g., four sub-regions) by the horizontal stem portion 191 a and thevertical stem portion 191 b. Each sub-region may include a plurality offine branch portions 191 c. Further, in exemplary embodiments, anoutskirt stem portion surrounding an outskirt of the pixel electrode 191may be included.

The fine branch portion 191 c of the pixel electrode 191 forms an angleof about 40° to 45° with the gate line 121 or the horizontal stemportion 191 a. Further, the fine branch portions 191 c of two adjacentsub-regions may be orthogonal (or substantially orthogonal) to eachother. Further, a width of the fine branch portion 191 c may begradually increased, and intervals between the fine branch portions 191c may be the same or different from each other.

The pixel electrode 191 is physically and electrically connected to thedrain electrode 175 through the contact hole 185, and receives a datavoltage from the drain electrode 175.

The aforementioned descriptions of the thin film transistor Q and thepixel electrode 191 are merely exemplary, and a thin film transistorstructure (or switching element) and a pixel electrode design may bemodified to, for example, improve lateral surface visibility, etc.

A first (e.g., lower) alignment layer 11 is formed on the pixelelectrode 191, and the lower alignment layer 11 may be a verticalalignment layer. The lower alignment layer 11 may be formed includingany suitable material generally used as a liquid crystal is alignmentlayer, such as polyamic acid, polysiloxane, polyimide, etc.

A second (e.g., upper) alignment layer 21 is positioned on a portionfacing the lower alignment layer 11. A microcavity 305 is formed betweenthe lower alignment layer 11 and the upper alignment layer 21. Liquidcrystal material including liquid crystal molecules 310 is injected intothe microcavity 305, and the microcavity 305 has a liquid crystalinjection hole 307. The microcavity 305 may be formed in a columndirection of the pixel electrode 191, or, in other words, a verticaldirection. In exemplary embodiments, the alignment material forming thealignment layers 11 and 21 and the liquid crystal material including theliquid crystal molecule 310 may be injected into the microcavity 305using a capillary force.

According to exemplary embodiments, the microcavity 305 may be formedbased on the aforementioned device for monitoring the liquid crystaldisplay. For example, in FIG. 3, since the microcavity is formed byremoving the first sacrificial layer 300 a and defects may be caused ifthe first sacrificial layer 300 a is not completely removed, the etchant(e.g., liquid chemical) for removing the first sacrificial layer 300 amay be replaced according to the aforementioned device for monitoringthe liquid crystal display and method for manufacturing the liquidcrystal display. This may be done to prevent or otherwise reduce theoccurrence of defects.

The microcavity 305 is divided in a vertical direction by a plurality ofliquid crystal injection hole forming regions 307FP positioned at anoverlapping portion with the gate line 121, and is formed in plural inan extension direction of the gate line 121. Each of the microcavities305 formed in plural may correspond to the pixel region, and the pixelregion may correspond to a region utilized to display an image. Inexemplary embodiments, since the liquid crystal material is injectedthrough the liquid crystal injection hole 307 of the microcavity 305,the liquid crystal display may be formed without forming a separateupper substrate.

A common electrode 270 and a lower insulating layer 350 are positionedon the upper alignment layer 21. The common electrode 270 receives acommon voltage and forms an electric field together with the pixelelectrode 191 to which a data voltage is applied. The imposition of theelectric field may be utilized to control an inclination direction ofthe liquid crystal molecules 310 positioned in the microcavity 305between the two electrodes 191 and 270. The common electrode 270 and thepixel electrode 191 form a capacitor, which is configured to maintainthe applied voltage for a duration of time after the thin filmtransistor is “turned off”. The lower insulating layer 350 may be formedof any suitable material, such as, for example, silicon nitride (SiNx),silicon oxide (SiOx), etc.

According to exemplary embodiments, the common electrode 270 may bedisposed on the microcavity 305 (as shown in the drawings) or may beformed on a lower portion of the microcavity 305 to drive the liquidcrystal disposed in the microcavity 305 based on a coplanar electrode(CE) mode.

A roof layer 360 is positioned on the lower insulating layer 350. Theroof layer 360 serves to support the microcavity 305 defining a spacebetween the pixel electrode 191 and the common electrode 270. The rooflayer 360 may include any suitable material, such as, for example,silicon oxycarbide (SiOC), a photoresist, and/or other organicmaterials.

When the roof layer 360 includes silicon oxycarbide (SiOC), the rooflayer 360 may be formed via a chemical vapor deposition method. When theroof layer 360 includes the photoresist, the roof layer 360 may beformed by a coating method. It is contemplated, however, that any othersuitable process may be utilized. It is noted that silicon oxycarbide(SiOC) enables high transmittance and strain does not occur becauselayer stresses are small among the layers formed by, for example, thechemical vapor deposition method. Accordingly, when the roof layer 360is formed of silicon oxycarbide (SiOC), a stable layer through whichlight passes well may be formed.

An upper insulating layer 370 is positioned on the roof layer 360. Theupper insulating layer 370 may come into contact with an upper surfaceof the roof layer 360. The upper insulating layer 370 may be formed ofany suitable material, such as, for example, silicon nitride (SiNx),silicon oxide (SiOx), etc. A capping layer 390 is positioned on theupper insulating layer 370. The capping layer 390 comes into contactwith an upper surface and a lateral surface of the upper insulatinglayer 370. The capping layer 390 covers the liquid crystal injectionhole 307 of the microcavity 305 exposed by the liquid crystal injectionhole forming region 307FP. The capping layer 390 may be formed of, forexample, a thermosetting resin, silicon oxycarbide (SiOC), graphene,etc.

When the capping layer 390 is formed of graphene, since graphenetypically exhibits high permeation resistance to gas including helium,and the like, the capping layer 390 may be configured to cover theliquid crystal injection hole 307. Further, since graphene is a materialhaving a carbon bond, even though graphene comes into contact with theliquid crystal material, the liquid crystal material may not becontaminated. Moreover, graphene may serve to protect the liquid crystalmaterial with respect to external contaminants, such as oxygen,moisture, debris, etc.

An overcoat layer (not illustrated) formed of an inorganic layer or anorganic layer may be positioned on the capping layer 390. The overcoatlayer may serve to protect the liquid crystal molecules 310 injectedinto the microcavity 305 from an external impact, as well as planarizethe layer capping layer 390.

According to exemplary embodiments, the liquid crystal injection holeforming region 307FP is formed between the microcavities 305 adjacent ina vertical direction. A light blocking layer 500 covering the thin filmtransistor Q and the contact hole 185 is formed in the liquid crystalinjection hole forming region 307FP. The light blocking layer 500 isformed of any suitable material capable of reducing a leakage current ofthe thin film transistor Q due to external light and blocking light inorder to prevent a reduction in a contrast ratio due to reflected light.The light blocking layer 500 may be made of any suitable organicmaterial. The light blocking layer 500 may be formed of the samematerial as the light blocking member 220. In exemplary embodiments, thelight blocking layer 500 may be formed in a longitudinal extensiondirection of the gate line 121.

A first passivation layer 340 is positioned on a lower portion of thelight blocking layer 500. A common electrode portion 270 a and a secondpassivation layer 350 a are positioned on the light blocking layer 500.In this manner, the first passivation layer 340 and the secondpassivation layer 350 a may be formed to surround the light blockinglayer 500 and configured to prevent the light blocking layer 500 frombeing exposed to the outside. A passivation layer including the firstpassivation layer 340 and the second passivation layer 350 a may beformed of any suitable material, such as, for example, silicon nitride(SiNx), silicon oxide (SiOx), etc.

According to exemplary embodiments, the first passivation layer 340 maybe formed in only the liquid crystal injection hole forming region307FP, and the second passivation layer 350 a may be formed at the samelevel as the lower insulating layer 350.

The capping layer 390 may cover the light blocking layer 500, as well asthe liquid crystal injection hole 307. To this end, the capping layer390 may fill the liquid crystal injection hole forming region 307FPbetween the microcavity 305 and the light blocking layer 500.

According to exemplary embodiments, as illustrated in FIG. 3, apartition forming portion PWP is formed between the microcavities 305adjacent in a horizontal direction. The partition forming portion PWPmay be formed in a longitudinal extension direction of the data line171, and may be formed together with the light blocking layer 500, suchas simultaneously formed with the light blocking layer 500. Accordingly,the partition forming portion PWP may be made of the same material asthe light blocking layer 500.

A polarizer (not illustrated) may be positioned on a lower portion ofthe insulation substrate 110 and an upper portion of the upperinsulating layer 370. The polarizer may include a polarization elementgenerating polarization and a TAC (tri-acetyl-cellulose) layer forensuring durability. Directions of transmissive axes of an upperpolarizer and a lower polarizer may be vertical or parallel according toexemplary embodiments.

While certain exemplary embodiments and implementations have beendescribed herein, other embodiments and modifications will be apparentfrom this description. Accordingly, the invention is not limited to suchembodiments, but rather to the broader scope of the presented claims andvarious obvious modifications and equivalent arrangements.

What is claimed is:
 1. A device for monitoring a liquid crystal display,comprising: a substrate comprising a display region and a non-displayregion disposed at an edge of the display region, wherein the displayregion comprises: a thin film transistor disposed on the substrate; apixel electrode disposed on the substrate and connected to the thin filmtransistor; a first sacrificial layer disposed on the pixel electrode;and a roof layer disposed on the first sacrificial layer, wherein thenon-display region comprises: a second sacrificial layer disposed on thesubstrate; and the roof layer disposed on the second sacrificial layer,and wherein: the first sacrificial layer has a first longitudinaldimension and a first cross-sectional area; the second sacrificial layerhas a second longitudinal dimension and a second cross-sectional area;the first cross-sectional area and the second cross-sectional area arethe same as one another; and the second longitudinal dimension is longerthan the first longitudinal dimension.
 2. The device for monitoring aliquid crystal display of claim 1, wherein: the first sacrificial layeris configured to be completely removed over a first processing time; andin association with a second processing time longer than the firstprocessing time, the second sacrificial layer is configured tofacilitate confirmation of the complete removal of the first sacrificiallayer and a degree of removal of the second sacrificial layer isdetermined by monitoring the degree of etching of the second sacrificiallayer.
 3. The device for monitoring a liquid crystal display of claim 2,wherein the second processing time is at least 150% greater than thefirst process time.
 4. The device for monitoring a liquid crystaldisplay of claim 3, wherein the second sacrifical layer comprises: afirst section where the degree of etching of the second sacrificiallayer ranges from 100% of the first longitudinal dimension to a firstupper limit percentage value of the first longitudinal dimension; and asecond section where the degree of etching the second sacrificial layerranges from the first upper limit percentage value to a second upperlimit percentage value of the first longitudinal dimension, wherein thefirst upper limit percentage value is greater than 100%, and wherein thesecond upper limit percentage value is greater than the first upperlimit percentage value.
 5. The device for monitoring a liquid crystaldisplay of claim 4, wherein the second sacrificial layer furthercomprises: a third section where the degree of etching of the secondsacrificial layer is 100% or less of the first longitudinal dimension.6. The device for monitoring a liquid crystal display of claim 5,wherein, when the degree of etching at least extends to the first orthird sections, the second sacrifical layer is configured to indicatereplacement of an initial sacrificial layer removal composition.
 7. Thedevice for monitoring a liquid crystal display of claim 1, wherein theperipheral region further comprises: a dummy sacrificial layer disposedadjacent to the second sacrificial layer, wherein the dummy sacrificiallayer has the same cross-sectional area as the second sacrificial layer.8. The device for monitoring a liquid crystal display of claim 7,wherein the second longitudinal dimension is at least 150% greater thanthe first longitudinal dimension.
 9. The device for monitoring a liquidcrystal display of claim 8, wherein the second sacrifical layercomprises gradations marked along the second longitudinal dimension toindicate an extent of removal.
 10. The device for monitoring a liquidcrystal display of claim 9, wherein the gradations are marked on apartition structure disposed adjacent to the second sacrificial layer,the partition structure comprising an insulating layer.
 11. The devicefor monitoring a liquid crystal display of claim 1, wherein: the firstsacrificial layer is one of a plurality of first sacrificial layers in apattern of first sacrificial layers disposed in a pixel region of theliquid crystal display; the second sacrificial layer is one of aplurality of second sacrificial layers in a pattern of secondsacrificial layers; and a separation distance between ones of theplurality of first sacrificial layers is the same as a separationdistance between ones of the plurality of second sacrificial layers.